METHOD OF PRODUCING GALLIUM OXIDE MONOCRYSTALS Russian patent published in 2025 - IPC C30B15/14 C30B15/20 C30B29/16 

FIELD: growing monocrystals.

SUBSTANCE: invention relates to growing monocrystals which can be used in power electronics, micro- or optoelectronics, as well as in making high-quality substrates for growing epitaxial structures. Gallium oxide powder with alloying impurities is placed in an iridium crucible inside a growth chamber and melted. Gallium oxide monocrystals are grown by the Czochralski method in an argon-oxygen medium created inside the growth chamber when the crucible is heated to 1900 °C for at least 3 hours. During heating at temperature of 300 °C and pressure of not more than 100 Pa, argon is introduced to pressure of 102 kPa. At temperature equal to 1000 °C, oxygen is introduced until its content reaches 5 vol.%. Upon reaching 1900 °C, the melt is held for 30 minutes and cooled to 1850 °C to prevent melting of a pre-made gallium oxide crystal, which is lowered until it touches the melt surface at a rate of not more than 5 mm/min and rotation at rate of 10-30 rpm. Grown monocrystal is then drawn at a seed rate of 0.1 mm/min. Thickness of the drawn monocrystal is controlled by changing the crucible temperature by 1-2 °C. Grown monocrystal is separated from the melt. Crucible with the melt and the monocrystal are cooled to room temperature inside the growth chamber for at least 5 hours.

EFFECT: simplified technology and monocrystal growth control.

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