METHOD OF PRODUCTION OF THE SINGLE-CRYSTAL SILICON (VERSIONS) Russian patent published in 2006 - IPC C30B15/20 C30B15/30 C30B29/06 

FIELD: chemical industry; methods of production of the semiconductive materials.

SUBSTANCE: the invention is pertaining to chemical industry, in particular, to the method of production of the single-crystal silicon and may be used at growing the single-crystal silicon by Czochralski method. The method provides for smelting-down of the source silicon in the crucible, injection of the crystalline seed, the crystal drawing out from the melt in the rotating crucible onto the rotating seed at the coincidence of the direction of rotations of the crucible and the crystal. At that in compliance with the growth of the crystal in process of its production the speed of rotation of the crucible and the speed of rotation of the crystal is a step-by-step increasing at keeping approximately constant the ratio of the speeds of rotation of the crucible and the crystal. The method ensures production of silicon monocrystals with the homogeneous radial distribution of the dopant impurity and oxygen and with the uniform distribution of the required amount of oxygen along the length of the crystal.

EFFECT: the invention ensures production of silicon monocrystals with the homogeneous radial distribution of the dopant impurity and oxygen and with the uniform distribution of the required amount of oxygen along the length of the crystal.

6 cl, 2 ex, 2 dwg