FIELD: physics.
SUBSTANCE: invention relates to neuromorphic electronics and can be used as a synaptic element in the integral implementation of neural networks. Disclosed is an integrated electronic synaptic CMOS element comprising MOS transistors with hole conduction channels and further comprising an inverting amplifier, formed by integral operational amplifier, first, second, third and fourth integral resistors.
EFFECT: wider operating range of input analogue voltage of an electronic synaptic CMOS element.
1 cl, 3 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| INTEGRAL ELECTRONIC CMOS SYNAPSE | 2023 |
|
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| OPERATIONAL AMPLIFIERS BASED ON CMOS TRANSISTORS | 0 |
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| FUNCTIONALLY INTEGRATED PHOTOSENSITIVE MATRIX CELL | 2012 |
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| INTEGRATED-CIRCUIT N-BIT DIGITAL-TO-ANALOG CONVERTER (DESIGN VERSIONS) | 1995 |
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| DIFFERENTIAL MOSFET VOLTAGE COMPARATOR | 1992 |
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