FIELD: electricity.
SUBSTANCE: invention relates to semiconductor coordinate detectors of radiation particles. A MOS-diode cell of a solid radiation detector comprises a MOS-transistor, a bus of high positive (negative) power supply voltage and an output bus. The MOS-transistor is a depleted transistor of n (p) conductivity type (i.e. has an inbuilt channel), at the same time its gate area is connected to the common power supply bus, a drain - to the output bus, and the gate is connected to an anode (cathode) of the diode and to the first output of the resistor, the diode cathode (anode) is connected to the bus of high positive (negative) power supply voltage, the second output of the resistor is connected to the bus of negative (positive) shift voltage. Also a structure (a functionally integrated structure) of the MOS-diode cell of the solid radiation detector is proposed.
EFFECT: increased quality of detection.
8 cl, 10 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| CAPACITIVE MOS DIODE CELL OF PHOTODETECTOR-RADIATION DETECTOR | 2014 |
|
RU2583955C1 |
| MEMORY CELL FOR FAST ERASABLE PROGRAMMABLE READ-ONLY MEMORY AND METHOD OF ITS PROGRAMMING | 2009 |
|
RU2481653C2 |
| DYNAMIC SERIAL FUNCTIONAL DEVICE | 2005 |
|
RU2392672C2 |
| MEMORY CELL FOR HIGH-SPEED EEPROM WITH CONTROLLED POTENTIAL OF UNDER-GATE REGION | 2011 |
|
RU2465659C1 |
| FUNCTIONALLY INTEGRATED PHOTOSENSITIVE MATRIX CELL | 2012 |
|
RU2517917C2 |
| DYNAMIC MEMORY LOCATION | 2001 |
|
RU2216795C2 |
| TERNARY CMOS "NOT" LOGIC ELEMENT | 2011 |
|
RU2481701C2 |
| DEVICE FOR PROTECTION AGAINST STATIC ELECTRICITY DISCHARGES OF POWER LEADS OF COMPLEMENTARY MOS (METAL-OXIDE-SEMICONDUCTOR) INTEGRATED CIRCUITS ON SILICON WAFERS WITH N-TYPE CONDUCTIVITY | 2013 |
|
RU2585882C2 |
| INTEGRATED BI-MOS RADIATION DETECTOR CELL | 2006 |
|
RU2383968C2 |
| BIPOLAR CELL COORDINATE SENSOR - RADIATION DETECTOR | 2014 |
|
RU2583857C1 |
