METHOD OF COOLING POWERFUL SEMICONDUCTOR DEVICES WITH FORMATION OF LOCAL INCREASE IN HEAT CARRIER FLOW RATE IN PLACES OF HEAT RELEASE Russian patent published in 2025 - IPC G12B15/04 H05K7/20 

FIELD: electric elements.

SUBSTANCE: invention can be used for cooling powerful semiconductor devices. Essence of the invention consists in the fact that the semiconductor devices cooling method is characterized by the fact that a single cooling flow is divided into local cooling flows, local cooling flows are supplied to the central points of the heat-generating crystals installation points with the creation of turbulence zones in the centre of the heat-generating surfaces with an increase in the speed of local cooling flows and with its deceleration after passing through the turbulence zones, after which local flows are combined into a single flow and removed from the semiconductor device, wherein the number of local cooling flows is selected equal to the number of heat-generating crystals of the semiconductor devices, supply of local cooling flows is performed perpendicular to the surface of the module base in places of installation of heat-generating semiconductor crystals.

EFFECT: enabling cooling of semiconductor devices with formation of local increase in heat carrier flow rate in places of heat release.

1 cl, 2 dwg