MEMS PRESSURE SENSOR Russian patent published in 2025 - IPC G01L7/08 

FIELD: physics.

SUBSTANCE: present invention relates to pressure sensors. MEMS pressure sensor comprises a substrate in the centre of which a through groove is formed; a thin-film membrane which is formed on the silicon substrate, wherein the central part of the thin-film membrane is open in a through-groove formed in the substrate, round-shaped membrane, and in the substrate upper part, above the thin-film membrane, a silicon partition is formed, which serves as a continuation of the silicon substrate, initial deflection of the membrane is directed towards the partition, the radius of the opening of the silicon partition is half the radius of the thin-film membrane and has a greater thickness than the thin-film membrane. Radius and thickness of the thin-film membrane are determined by the formula

,

where σ_max is mechanical strength of membrane material; μ is Poisson's ratio for the thin-film membrane material, h is the membrane thickness, a is the membrane radius, Pmax is critical measured pressure; to determine the current pressure value P, the formula

is used, where C₁ is equal to 4, and the coefficient C₂ is equal to 8/3, w_max is the maximum deflection of the membrane, E is the Young's modulus, σ₀ is residual stress in membrane.

EFFECT: high accuracy of the sensor (high accuracy of measuring deflection of the membrane) owing to use of one thin-film strong membrane and a silicon partition with a hole.

1 cl, 5 dwg