CAPACITIVE PRESSURE PICKUP Russian patent published in 2005 - IPC

Abstract RU 2251087 C2

FIELD: microelectronics.

SUBSTANCE: capacitive pressure pickup comprises silicon substrate provided with a diaphragm inside. The diaphragm is covered in series with epitaxial monocrystalline layer of calcium fluoride, epitaxial layer of silicon, metallized layer, and second silicon plate.

EFFECT: simplified manufacturing and enhanced sensitivity.

1 dwg

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RU 2 251 087 C2

Authors

Velichko A.A.

Iljushin V.A.

Filimonova N.I.

Dates

2005-04-27—Published

2003-06-09—Filed