MEMORY GATE FOR READ-ONLY MEMORY UNIT Russian patent published in 1997 - IPC

FIELD: computer engineering. SUBSTANCE: device has semiconductor substrate of first conductance type, second-type source and drain regions which are located near to substrate surface. Over this regions first dielectric layer is located. It may be made from silicon oxide layer which depth is 40-100 A. Over first dielectric layer second dielectric layer and conducting electrode are located. Second dielectric layer may be made from silicon nitride which depth is 200-500 A. In addition third dielectric layer which may be made from silicon oxide layer which depth is 10-30 A and is located conducting electrode and second dielectric layer. EFFECT: increased speed for information clearing, increased reliability.