FIELD: computer engineering; electrically erasable programmable read-only memory.
SUBSTANCE: memory element for electrically erasable programmable read-only memory consists of semiconductor base with source and drain, tunnel layer, storage layer, blocking layer and conductive gate implemented on the planar side. Base is made of p-type silicon, tunnel layer is made of silicon oxide (SiO2), storage layer is made of silicon nitride (Si2N4), blocking layer is made of silicon oxide (SiO2), and the conductive gate is made of platinum silicide (PtSi). The depth of tunnel layer is 1.8-5.0 nm.
EFFECT: increased memory element reliability in read mode.
2 cl, 1 dwg
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