FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY Russian patent published in 2010 - IPC G11C14/00 B82B1/00 

FIELD: information technology.

SUBSTANCE: flash memory element for electrically programmable read-only memory has a semiconductor substrate on which there is a source and a drain, on which a tunnel layer, a memory layer and a gate are made in series between the source and the drain. The memory layer is made from a dielectric with high concentration of electron and hole traps and permittivity value which is greater than permittivity of silicon nitride. The memory layer may be made from the following material: TiO₂, Ta₂O₅, Al_xTa_yO_z, TaO_xN_y, HfO₂, HfSiO_xN_y, HfO_xN_y, Er₂O₃, La₂O₃, ZrO₂, ZrO_xN_y, ZrSiO_x, Gd₂O₃, Y₂O₃, Al₂O₃, AlO_xN_y. The memory element may have a blocking layer between the memory layer and the gate.

EFFECT: invention reduces voltage (up to 6 V) and cuts on time for recording and deleting information (up to 10 mcs).

6 cl, 1 dwg