FIELD: physics; computer engineering.
SUBSTANCE: invention relates to computer engineering, particularly to electrically programmable read-only memory (EPROM) which stores information when power is off (flash memory) and can be used in memory elements of computers, microprocessors, in different portable electronic devices, as well as in different electronic money and documents. The flash memory element for electrically programmable read-only memory has a semiconductor substrate with a source and a drain, on which between the source and the drain there is a tunnel layer, a memory layer, a blocking layer and a gate. Between the memory layer and the blocking layer there is an additional blocking layer made from silicon oxide whose permittivity is considerably less than permittivity of material of the blocking layer.
EFFECT: increased reliability of the EPROM flash memory element in information storage mode.
8 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2008 |
|
RU2357324C1 |
| FLASH MEMORY ELEMENT OF ELECTRICALLY ALTERABLE READ-ONLY MEMORY | 2008 |
|
RU2368037C1 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2009 |
|
RU2402083C1 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY REPROGRAMMABLE READ-ONLY MEMORY | 2009 |
|
RU2403631C1 |
| FLASH ELEMENT OF MEMORY | 2013 |
|
RU2546201C2 |
| FLASH MEMORY ELEMENT OF AN ELECTRICALLY REPROGRAMMABLE PERMANENT MEMORY DEVICE | 2006 |
|
RU2310929C1 |
| FLASH MEMORY ELEMENT FOR ELECTRICALLY PROGRAMMABLE READ-ONLY MEMORY | 2015 |
|
RU2584728C1 |
| MEMORY ELEMENT FOR ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY | 2005 |
|
RU2287865C1 |
| FIELD TRANSISTOR WITH MEMORY CELL | 2012 |
|
RU2543668C2 |
| MEMORY GATE FOR READ-ONLY MEMORY UNIT | 1981 |
|
SU1012704A1 |
