FIELD: information technology.
SUBSTANCE: flash memory element for electrically reprogrammable read-only memory has a semiconductor substrate with on which there is a source and a drain, and tunneling layer, a memory layer, a blocking layer and conducting gate are made in series between the source and the drain. The memory layer is made as component of a sublayer of silicon nitride with a surface region containing excess silicon, which gives rise to presence of surface traps, wherein the memory layer has thickness which enables domination of said traps in the storage medium.
EFFECT: more reliable information storage at high temperature conditions (up to 85°C).
9 cl, 2 dwg
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