ARRANGEMENT FOR GROWING CRYSTALS BY VERTICALLY DIRECTED CRYSTALLIZATION Russian patent published in 1997 - IPC

Abstract SU 1332886 A1

FIELD: crystal growth. SUBSTANCE: arrangement has two-zone vertical oven, the zones being separated with a diaphragm. The oven incorporates a free-to-move cylindrical ampoule with conical end. The ampoule is provided with a screen with diameter equal to that of ampoule and its lower end is located in lower oven zone. Monocrystals CuAlSe2 with diameter 15 mm and 30 mm long are prepared. Overheating of top zone is reduced by 30%. EFFECT: eliminated overheating of ampoule in oven top zone and reduced temperature gradient in melt. 1 dwg, 1 tbl

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SU 1 332 886 A1

Authors

Belevich N.N.

Grutso S.A.

Makovetskaja L.A.

Dates

1997-01-27Published

1985-09-23Filed