METHOD OF PRODUCING ISOLATION OF INTEGRATED CIRCUITS Russian patent published in 1996 - IPC

Abstract SU 1340500 A1

FIELD: microelectronics. SUBSTANCE: method is based upon removing spaces in grooves. The grooves are filled with silicon dioxide by means of pyrolysis of tetrametoxysilane at pressure at the reactor of 133-266. Temperature of the substrates is sustained within 800-880 deg C range. Elimination of spaces reduces technological requirements to profiles of grooves and increases output. EFFECT: simplified technology of production; improved output. 4 dwg, 1 tbl

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SU 1 340 500 A1

Authors

Danieljan V.S.

Evdokimov V.L.

Zajdlin G.M.

Manzha N.M.

Fishel' I.Sh.

Dates

1996-04-20Published

1986-01-03Filed