FIELD: microelectronics. SUBSTANCE: method is based upon removing spaces in grooves. The grooves are filled with silicon dioxide by means of pyrolysis of tetrametoxysilane at pressure at the reactor of 133-266. Temperature of the substrates is sustained within 800-880 deg C range. Elimination of spaces reduces technological requirements to profiles of grooves and increases output. EFFECT: simplified technology of production; improved output. 4 dwg, 1 tbl
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Authors
Dates
1996-04-20—Published
1986-01-03—Filed