METHOD OF MANUFACTURE OF HIGH-VOLTAGE INTEGRATED CIRCUITS WITH DIELECTRIC INSULATION Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: to increase the output of suitable separating grooves due to the increase of depth, the following sequence of production operations is used: masking by silicon nitride on the surface of a single-crystal water of n-regions corresponding to the arrangement of power high-voltage transistors, application of protective coating, photolithography over the protective coating, etching of separating grooves, removal of the protective coating, forming of a high-alloy layer of electron conduction, forming of dielectric film based on silicon oxide, forming of regions of single-crystal silicon on the water surface corresponding to the arrangement of power high-voltage transistors, removal of silicon nitride sections by selective etching, epitaxial building-up of a silicon substrate with single-crystal and polycrystal sections, removal of single-crystal silicon water before coating the bottom of separating grooves, forming in the obtained structure of power high-voltage transistors in regions with side dielectric insulation, and low-voltage transistors in regions with complete dielectric insulation. EFFECT: facilitated procedure. 5 dwg, 1 tbl