PROCESS OF MANUFACTURE OF MIS TRANSISTORS OF INTEGRATED MICROCIRCUITS WITH POLYSILICON GATE Russian patent published in 1994 - IPC

Abstract SU 1345976 A1

FIELD: microelectronics. SUBSTANCE: field oxide is created on monocrystal substrate with the aid of process of local oxidation of silicon. Then undergate oxide and polysilicon gate are manufactured. Oxidation of gate is carried out. Then oxide over entire surface of structure is etched. With this areas of source and drain are open and oxide on polysilicon gate is kept. Using produced mask ion doping of areas of source and drain is conducted. Finally standard stages of manufacture of MIS transistor are performed. EFFECT: simplified manufacturing process, increased speed of response of MIS transistors and improved degree of integration of MIS large integrated circuits on their base. 4 dwg

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SU 1 345 976 A1

Authors

Glushchenko V.N.

Krasnozhon A.I.

Smirnov L.K.

Dates

1994-02-28—Published

1986-01-02—Filed