PROCESS OF FORMATION OF CMOS STRUCTURES WITH POLYSILICON GATE Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: in compliance with process of formation of CMOS structures with polysilicon gate first region of second type of conductance is formed on semiconductor plate of first type of conductance, then oxide layer is created, selective etching in regions of p and n channel transistors and in regions of drains and sources of p channel transistors is conducted, undergate dielectric is formed in etched regions, photoresist mask is formed on it. Polysilicon uncovered by mask is removed. Regions of drains and sources of p channel transistors are doped with dopant of second type of conductance. Mask for doping with dopant of first type of conductance is formed by removal of oxide layer above regions of drains and sources of n channel transistors and doping of polysilicon is conducted simultaneously with doping of regions of sources and drains of n channel transistors. After this oxidization of polysilicon gates is finally performed. EFFECT: facilitated manufacture. 4 cl, 1 dwg