FIELD: semiconductor engineering. SUBSTANCE: rectifying contact is made on specimen surface in the form of semiconductor plate. Specimen surface is illuminated on rectifying contact side, photocurrent is measured in absence and presence of magnetic field directed perpendicular to specimen surface. Photocurrent values obtained are used to calculate mobility of minority charges injected by light. This method allows for measuring photocurrents in specimens of thickness greater than when using methods depending for measurement of fluorescence on opposite side of illuminated specimen surface. Manufacture of thin plates is not required for this method. EFFECT: facilitated procedure, provision for determining mobility in specimens of great thickness. 1 dwg
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