FIELD: semiconductor engineering. SUBSTANCE: method involves measurement of diffusion length of minority carriers by constructing curve showing light intensity versus inverse value of light absorption factor at constant surface photo-emf. Diffusion length is measured in absence and presence of magnetic field action on specimen, field flux density vector being parallel to specimen surface; coordinates of intersections of curves for light intensity with positive half- axis of light intensity are determined in absence and presence of magnetic field action on specimen, mobility of minority carriers is calculated using definite formula. EFFECT: increased number of parameters measured due to determining mobility, life time, and speed of surface recombination of minority carriers. 2 dwg
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