PROCESS OF FORMATION OF EPITAXIAL STRUCTURES Russian patent published in 1995 - IPC

FIELD: semiconductor electronics. SUBSTANCE: silicon plates passed through operations of formation of n⁺ latent layers are used as substrate. p⁺ latent layer is formed on plate by implantation of boron with energy 75 keV and dose 10μCo/sq. cm. Ions of argon with dose p⁺ are implanted into region 5·10¹⁵cm^-2 of latent layer with the use of same mask immediately after implantation of boron. After removal of mask and rinsing annealing is conducted for simultaneous activation of boron and generation of secondary defects. Then epitaxial layer is grown and insulating oxide is worked deep. In this case p⁺ latent layer proper and part of epitaxial layer remaining above it form effective getter of fast- diffusing impurities and point defects. EFFECT: improved quality of formed structures with simultaneous simplification of process.