PHOTORESIST COMPOSITION Russian patent published in 1995 - IPC

Abstract SU 1438478 A1

FIELD: photoresists. SUBSTANCE: photoresist composition has light-sensitive component (in mass %) on the naphtochynondiazyde base 7-8, phenol-formaldehyde gum 12-13, 50-% aqueous solution of C10-C16-alkylbenzildimethylammonium chloride 0,05-0,5, organic solvent - to 100. Size of the element to be developed to be equal to 2,8-3 mcm (in comparison with 2,8-3,5 mcm available) at useful exposure time 10-15 s (instead of 10-12 s) and development time being equal to 20 s (instead of 40 s) in 6-% KOH without any defects in form of residual parts of photoresist. EFFECT: reduced development time; widened useful exposure time interval. 2 tbl

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SU 1 438 478 A1

Authors

Gunina N.M.

Pimkina Z.A.

Pojarkov I.I.

Vikulina S.A.

Dates

1995-05-27Published

1987-01-05Filed