POSITIVE-ACTING PHOTORESIST AND ITS PROCESSING Russian patent published in 1994 - IPC

FIELD: photolithography for integrated circuit manufacture. SUBSTANCE: special resist is 15 to 25% solution of mixture of known dry components taken in known proportion in water-soluble organic solvent with relative volatility for ether in the range of 3-20; heat treatment of mentioned photoresist film is made at temperature not lower than 5 C below brittle point of photoresist film-forming component and not higher than intensive thermolysis temperature of light-sensing component within time period characteristic of heat treatment process employed. EFFECT: simplified process of forming rectangular photoresistive profile by using special photoresist. 3 cl, 3 dwg, 2 tbl