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1 452 398

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A1

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IPC

(21) (22)

Application

4159435/25, 1986-12-10

(22)

Actual filing date

1986-12-10

(45)

Published

1995-05-27

(72)

Inventor

Gitlin V.R.Kadmenskij S.G.Ivakin A.N.Levin M.N.Kolesnikov V.F.Kadmenskij A.G.Ostroukhov S.S.

METHOD FOR GENERATION OF METAL-DIELECTRIC- SEMICONDUCTOR TRANSISTORS Russian patent published in 1995 - IPC

Abstract SU 1452398 A1

FIELD: semiconductor technology. SUBSTANCE: method involves generation of source, drain and gate dielectric areas on silicon plate, application of metal tracks and adjustment of threshold voltage by affecting plates with built structures by X-ray radiation which value is proportional to adjustment value ΔU.. This is achieved by measuring geometric distribution of threshold voltages of transistors over plate and detection of n+1 areas where threshold voltage conforms to equation [Uo+(n-1/2)ΔUo]-[Uo+(n-1/2)ΔUo], where n is natural number, ΔUo is possible range of threshold voltage for good transistors. Later on, selected zones of plate are affected by X-ray radiation by doses which correspond to average value of deviation of threshold voltage n·ΔUo in each zone. EFFECT: increased good-to-bad ratio. 1 dwg

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SU 1 452 398 A1

Authors

Gitlin V.R.

Kadmenskij S.G.

Ivakin A.N.

Levin M.N.

Kolesnikov V.F.

Kadmenskij A.G.

Ostroukhov S.S.

Dates

1995-05-27—Published

1986-12-10—Filed

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