SEMICONDUCTOR GENERATOR Russian patent published in 1994 - IPC

Abstract RU 2006102 C1

FIELD: solid-state electronics. SUBSTANCE: solid-state structure of generator has two p-n junctions whose planes are parallel to layers of superlattice of underdoped zone provided with electrode. EFFECT: extended functional capabilities. 1 dwg

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RU 2 006 102 C1

Authors

Naumov A.V.

Sankin V.I.

Dates

1994-01-15—Published

1990-12-04—Filed