STRUCTURE OF SEMICONDUCTOR INJECTION TRANSIT-TIME DEVICE Russian patent published in 1994 - IPC

Abstract RU 2006994 C1

FIELD: semiconductor electronics. SUBSTANCE: such device has markedly wider capabilities due to use of it not only as generator but as key and selector of pulses. This is achieved by selection of material with definite parameters for poorly doped region and by insertion of additional electrode into this region. EFFECT: expanded operational capabilities. 1 dwg

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RU 2 006 994 C1

Authors

Naumov A.V.

Sankin V.I.

Dates

1994-01-30—Published

1990-12-04—Filed