INTEGRAL TENSOCONVERTER Russian patent published in 1994 - IPC

FIELD: measurement technology. SUBSTANCE: integral tensoconverter has restoring silicon element on which surface tensoresistive structure is made. This structure is manufactured in the form of regular orthogonal grid with square meshes. Electric contact is fabricated to each node of grid. Tensoresistors of structure are arranged in symmetry to center of restoring element produced, for instance, in the form of rectangular membrane and oriented along mutually perpendicular directions of maximal tensosensitivity. Grid has not less than four meshes on each coordinate. Tensoresistors placed along external perimeter of grip are twice as narrow as the rest in width. EFFECT: reduced value and temperature of drift of unbalance. 11 dwg