FIELD: microelectronics. SUBSTANCE: method involves generation of insulating layer of silicon oxide on surface of silicon structure with projected gates, generation of phosphor- silicate glass film over insulating layer. Silicon oxide layer over area of p-type is deeper than that over n-type areas. Photoresistive mask with holes for contact areas of projected gates is used for etching of phosphor-silicate glass film and silicon layers until n-type areas are shown. Then method involves phosphor diffusion and fusion of phosphor-silicate glass. Photoresistive mask with holes for contacts to p-type areas is generated for access to contacts which size is lesser than corresponding holes on previous photoresistive mask. Generated photoresistive mask is used for opening holes to p-areas, mask is removed, and film of phosphor- silicate glass in holes to n-areas is etched. Method prevents inversion of conductance of p-type areas of projected gates and degradation of their characteristics. EFFECT: increased good-to-bad ratio. 8 dwg
