PROCESS OF MANUFACTURE OF INTEGRATED MICROCIRCUITS WITH SCHOTTKY DIODES HAVING DIFFERENT HEIGHT OF POTENTIAL BARRIER Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: process of manufacture of integrated microcircuits with Schottky diodes having different thresholds involves formation of passive elements and active structures in monocrystalline substrate of n type, successive opening of contact windows in dielectric coat to ohmic contacts and to Schottky diodes having large and small height of potential barrier, subsequent deposition of metal layers including noble and barrier metals and formation of contact electrodes and interconnections. After formation of passive elements and active structures simultaneous opening of contact windows in dielectric coat to regions of ohmic contacts of n⁺ and p⁺ types and to regions of formation of high-barrier Schottky diodes is carried out by method of plasma-ion etching. Then before deposition of barrier layer directed plasma-chemical or reactive cleaning with subsequent total removal of 20-40 nm of silicon oxide is performed with ion energy < 100 eV. EFFECT: two-three-fold increase of speed of response of integrated circuits. 2 cl