METHOD FOR MANUFACTURE OF SILICON BIPOLAR MICROWAVE TRANSISTOR Russian patent published in 1996 - IPC

FIELD: semiconductor electronics, particularly, technology for manufacture of semiconductor devices. SUBSTANCE: method includes transistor includes formation of dielectric film on substrate surface, opening of windows in the dielectric film for base regions and alloying them with base admixture. Then silicon-containing dielectric film is deposited, window is opened in the region of emitter and oxidation is effected to produce in window a silicon dioxide film 0.08-0.12 mcm thick. Contact windows are opened and metal coating is formed. In so doing, contact window to emitter is opened by local pickling of thermal film of silicon dioxide on the surface of emitter region. Method provides for formation of film with perfect structure of dielectric above passive sections of substrate and smoothed edges of contact windows to active regions of transistor to prevent punctures in the region of insulating dielectric and rupture of metal-coated busbars. EFFECT: higher yield and reliability of transistors due to smoothing the relief of surface structure before metal coating.