BIPOLAR TRANSISTOR BASED ON HETEROEPITAXIAL STRUCTURES AND METHOD OF ITS REALISATION Russian patent published in 2014 - IPC H01L29/737 H01L21/331 

FIELD: electricity.

SUBSTANCE: bipolar transistor made on the basis of heteroepitaxial structures SiGe, includes a substrate of high-resistance silicon with crystallographic orientation (111), a buffer layer from unalloyed silicon, a subcollector layer from highly alloyed silicon of n-type conductivity, above which there is a collector of silicon of n-type of conductivity, a thin base from SiGe of p-type conductivity, an emitter from silicon of n-type conductivity, contact layers based on silicon of n-type conductivity and ohmic contacts. At the same time the bipolar transistor in the field of the base is made to ensure double accelerating drift field due to smooth change in Ge content along the base with reduction of its content from the field of the collector to the field of the emitter and due to smooth variation in concentration of the alloying mixture along the base with its increase from the field of the collector to the field of the emitter.

EFFECT: simplified method to manufacture a transistor, higher yield of good and reliable transistors with high border frequencies, low noise ratio, high amplification ratio and efficiency factor.

2 cl, 1 dwg