FIELD: measurement technology. SUBSTANCE: method involves manufacture of top and bottom glass boards with metallized plates and central silicon board that has frame and moving plate attached to it, interconnection of boards, and connection of their external leads by forming tentative protection in vicinity of slots and jumpers on nonplanar side before silicon etching, etching of silicon on planar side through depth (0,05...0,1)horig-hjump within these regions, where horig is original thickness of plate and hjump is thickness of jumpers, removal of tentative protection, two-sided opposing etching of silicon through depth [0,3-(0,005-0,01)]horig+0,5hjump, formation of silicon dioxide film by thermal oxidation, formation of ports on it on planar side corresponding to configuration of jumpers, plate, and frame, boron alloying to concentration higher than 7·1014 cm-3 through depth hjump, removal of masking film, and final etching of silicon in 25-30% aqueous solution of ethylenediamine to form through slits and jumpers. EFFECT: improved sensitivity of transducer and increased output of serviceable products. 9 dwg
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Authors
Dates
1995-12-27—Published
1989-05-11—Filed