FIELD: manufacture of small-sized semiconductor high-sensitivity deformation converters. SUBSTANCE: deformation converter includes silicon crystal reacting to mechanical load with integral resistance strain gauges having metallized bonding pads for connection of external leads, is fitted metal buses 0.01-0.05 mm thick and silicon mount 0.3-1.0 mm thick, which carries bonding pads for external leads. Metal buses coupling resistance strain gauges with bonding pads for external leads are manufactured in the form of flat springs. In process of manufacture of deformation converter integral resistance strain gauge and metallized bonding pads to connect external leads are formed on silicon plate, plate is divided into individual converters and crystals with resistance strain gauges are connected to object for measurement. Different thickness masks are created under crystals and mounts on non-planar side of plate after formation of resistance strain gauges on plate, metal film is deposited on planer side of plate, photoresist mask with windows for bonding pads and metallization buses having zigzag configuration is formed on it. Metal film 0.01-0.05 mm thick is deposited by electrochemical method on windows, photoresist is removed, silicon on non-planar side is etched away between mounts and crystal to depth corresponding to thickness of crystal. Protective mark is removed from under crystal, silicon is etched away to obtain specified thickness of crystal and through holes between mount and crystal. Continuous layer of metal is etched away from planar side. For installation of converter crystal is pressed against surface of measured object by lowering it on springy metal buses relative to planar surface of mount. EFFECT: increased functional reliability and accuracy of deformation converter. 2 cl, 6 dwg
