MANUFACTURING METHOD OF HIGH-VOLTAGE BIPOLAR TRANSISTOR WITH INSULATED GATE Russian patent published in 2011 - IPC H01L21/331 

FIELD: electricity.

SUBSTANCE: formation of more alloyed layer of n-type conductivity, which adjoins the base layer of semiconductor structure, is performed prior to formation of base by ion implantation method by using the mask for base; at that, dose of implanted atoms of donor impurity D, which is expressed in micro coulombs per square centimetre, is D≤0.04/erfc[Xj/(0.455*Xd)], where erfc - additional function of errors; Xd - depth of more alloyed layer of n-type conductivity as per level of 0.5 of maximum difference value of concentration of donors and acceptors in this layer; Xj - depth of base, and acceleration mode of implanted impurity is chosen so that depth of more alloyed layer of n-type conductivity is more than Xj, but less than Xj+W, where W - minimum distance between p-n junctions "base-low alloyed layer" of two adjacent cells.

EFFECT: improvement of combination of characteristics of bipolar transistor with insulated gate: breakdown voltage capacitor-emitter in interlocking state and saturation voltage capacitor-emitter in conducting state.

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