FIELD: integral microelectronics. SUBSTANCE: each channel of device has additional diffusion area which type of conductance is opposite to that of substrate, and gate. This additional diffusion area is connected to writing gate and there is charge coupling from additional gate to additional diffusion area. Additional gate is also connected to drain of field-effect transistor. EFFECT: increased sensitivity due to increased precision of suppression of signal components carrying no information. 2 dwg
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Authors
Dates
1995-08-20—Published
1988-07-11—Filed