FIELD: gas-discharge process devices. SUBSTANCE: hollow cathode of charged-particles source is installed in auxiliary chamber. Disk mounted on end of cathode surface facing anode forms, together with cathode, annular slit. Slit area is two orders of magnitude smaller than that of auxiliary chamber internal surface. Chamber accommodates additional disks forming, together with cathode holder, annular slits. Area of each slit is greater than 1) of area of part of chamber internal surface between adjacent additional disks. This enables heating of active material in hollow cathode to temperature required for exciting arc discharge. Auxiliary chamber can be provided with contracting hole communicating with anode through limiting resistor is placed between cathode and anode. EFFECT: improved stability of arc discharge excitation. 2 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
CHARGED PARTICLES SOURCE | 1988 |
|
SU1568793A1 |
ION SOURCE | 1989 |
|
SU1769630A2 |
ION SOURCE | 0 |
|
SU854192A1 |
ION SOURCE | 1985 |
|
SU1402185A1 |
PLASMA ELECTRON SOURCE | 1978 |
|
SU728573A3 |
SOURCE OF CHARGED PARTICLES | 1989 |
|
SU1616412A3 |
SOURCE OF IONS OF METALS | 1986 |
|
SU1371434A1 |
SOURCE OF IONS OF GASES | 1988 |
|
SU1625254A3 |
ION SOURCE | 1990 |
|
RU1766201C |
PLASMA ELECTRON SOURCE | 1979 |
|
SU791103A1 |
Authors
Dates
1995-03-27—Published
1990-10-31—Filed