CATHODE-RAY TUBE SEMICONDUCTOR TARGET Russian patent published in 1995 - IPC

Abstract RU 2034357 C1

FIELD: vacuum-tube engineering. SUBSTANCE: target built around transistors is provided with isolated metal pads functioning as electron beam charge receivers. field-effect transistors are used. Each metal pad is electrically connected with control electrode of field-effect transistor. EFFECT: improved design. 3 dwg

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RU 2 034 357 C1

Authors

Khan A.V.

Gradoboev A.V.

Dates

1995-04-30—Published

1992-02-20—Filed