SEMICONDUCTOR OPTOELECTRONIC DEVICE Russian patent published in 1995 - IPC

FIELD: optoelectronics devices. SUBSTANCE: semiconductor optoelectronic device has emitting diode and photodiode with reception pad formed in one crystal on side of substrate. Photodiode is arranged uniaxially to radiator. Ohmic contacts to photodiode and radiator are fabricated concentric. Emitting diode is located between photodiode and substrate. Hole is made in center of photodiode. Additional layer of p type of conductance is injected through p-n layers and over entire surface of crystal, hole including, to depth not exceeding thickness of upper layer of structure. Protodiode structure is formed from first and second additional layers which inhibition zone width is bigger than that of inhibitor zone of active emitting diode. EFFECT: expanded application field. 3 dwg