AVALANCHE-TYPE PHOTODETECTOR Russian patent published in 1997 - IPC

FIELD: optoelectronics. SUBSTANCE: proposed avalanche-type photodetector can be used in the capacity of semiconductor photosensors of devices processing optical information, in spectrophotometry, astrometry, biophysics and systems of optical communication. It is composed of layer of semiconductor of opposite type of conductance, resistive layer and transparent conductive electrode, ohmic contact on reverse side of substrate formed consistently on semiconductor substrate. Recess matrix in the form of pyramids with spacing not exceeding double diffusion length of minority carriers is made in substrate and layer of semiconductor of opposite type of conductance is positioned on surfaces of recesses. EFFECT: enhanced signal-to-noise ratio. 1 dwg