FIELD: semiconductor electronics.
SUBSTANCE: ratio of areas of pn junction structure components and gap between pn junction and contact to substrate is chosen in avalanche-multiplication silicon lateral photodetector. Spatial charge area of pn junction fully covers gap between pn+ junction and pn+ contact to substrate. Avalanche multiplication of charge carriers is ensured by applying operating voltage due to concentration of electric field about small-size n+ and p+ areas.
EFFECT: reduced capacitance, enhanced speed and photosensitivity.
3 cl, 7 dwg
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