CUMULATIVE PHOTODETECTOR Russian patent published in 1997 - IPC

FIELD: detection of faint flows of light quanta, gamma radiation and nuclear particles. SUBSTANCE: device has semiconductor substrate which surface is covered with semiconductor regions which conductivity is opposite to that of substrate. Said regions are separated from field electrode with buffer layer. In addition between substrate and buffer layer device has semiconductor layers which conductivity is opposite to substrate and which are connected to buffer layer between semiconductor regions; high-conducting regions in which concentration of doping is greater than in substrate. High- conducting layers are located between semiconductor layers and substrate and are spaced from semiconductor regions by at least depth of semiconductor layers. semiconductor regions are connected to field electrode through buffer layer. EFFECT: increased functional capabilities. 2 cl, 1 dwg