AVALANCHE PHOTODETECTOR Russian patent published in 2018 - IPC H01L31/107 

FIELD: physics.

SUBSTANCE: avalanche detector contains located on same substrate a photoconverter of the optical signal subjected to detection, into the current of free charge carriers and at least one avalanche amplifier of this current that has two layers: a contact layer and a multiplication layer. The multiplication layer facing the substrate is made of semiconductor material of the same conductivity type that the photoconverter, and is adjacent to the photoconverter forming with it the electrical contact. The first electrode is located on the contact layer of the avalanche amplifier, and the second electrode is located on the conductive substrate. The second version of the photoconverter is also proposed, in which between the multiplication layer and the substrate there is a buffer layer adjacent to the photoconverter and forming an electrical contact with it. The multiplication layer, the photoconverter, and the buffer layer made of the semiconductor material of the same conductivity type, the first electrode is located on the contact layer of the avalanche amplifier, and the second - on the conductive substrate.

EFFECT: invention allows to realise avalanche detector having high sensitivity threshold, not limited by surplus dark noises when moving the photo-carriers from the photoconverter into the avalanche amplifier.

24 cl, 8 dwg