SEMICONDUCTOR AVALANCHE DETECTOR Russian patent published in 2014 - IPC H01L31/107 

FIELD: electricity.

SUBSTANCE: semiconductor avalanche detector according to the invention comprises a plurality of independent semiconductor regions located on the surface of a semiconductor layer, the plurality of semiconductor regions forming p-n junctions with the semiconductor layer, a common conducting bus separated from the semiconductor layer by a dielectric layer and separate microresistors which connect the semiconductor regions and the common conducting bus. On part of the surface of said semiconductor regions there are separate emitters which form potential barriers with the semiconductor regions, wherein said separate emitters are connected to an additional conducting bus by additional separate microresistors.

EFFECT: low level of optical crosstalk and faster operation of the semiconductor avalanche detector.

12 cl, 1 dwg