METHOD FOR PRODUCTION OF MONOCRYSTALS OF GALLIUM ARSENIDE Russian patent published in 1995 - IPC

Abstract SU 1824956 A1

FIELD: production of semiconductor materials. SUBSTANCE: monocrystals of gallium arsenide are pulled by vertical pulling technique. Effected prior to pulling is blowing with nitrogen with water content of 0.5-0.8 vol. with nitrogen flow rate of 0.8-1.2 l/kg of gallium arsenide. EFFECT: higher yield of satisfactory product due to purification of alloy from impurities. 1 tbl

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SU 1 824 956 A1

Authors

Kosushkin V.G.

Savel'Ev V.A.

Dates

1995-06-19—Published

1990-12-29—Filed