FIELD: crystal growing. SUBSTANCE: device for pulling the crystals from melt has crystal growing chamber accommodating coaxially installed crucible and heat unit. The latter includes two heat tubes installed in each other with heaters. Heat insulation is located between tubes. Heat unit is installed for rotation and axial movement. Device provides for 10-fold rise of product output, reduced nonuniformity of electric resistivity of gallium arsenide crystals to 2%, and decreased density of dislocation by 1000 times. EFFECT: higher quality and yield of products due to provision of controlled isothermal field round crystals. 2 dwg
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