PROCESS OF MANUFACTURE OF TRANSISTOR STRUCTURES WITH DIELECTRIC INSULATION Russian patent published in 1994 - IPC

FIELD: production of semiconductor integrated circuits. SUBSTANCE: process involves vacuum diffusion of arsenic into silicon substrates, masking oxidation, opening of windows, diffusion of phosphorus of high concentration to create contact to latent layer, removal of masking oxide, etching of pattern of separating valleys, oxidation of pattern of separating valleys, deposition of polysilicon to form substrate, removal of monocrystal silicon till separating valleys appear, formation of transistor structures in manufactured pockets of monocrystal silicon. EFFECT: 9% increase in output of good silicon structures with dielectric insulation against puncture voltage thanks to exclusion of phosphorus in areas of latent layers.