METHOD FOR DIFFUSION OF DOPING FROM SOLID SOURCE FOR MANUFACTURING SEMICONDUCTOR INSTRUMENTS Russian patent published in 1997 - IPC

FIELD: microelectronics, in particular, manufacturing of power semiconductor instruments, such as power bipolar transistors, field transistors, power units, power converters. SUBSTANCE: method involves loading silicon plates and solid doping source into quartz cassette, loading cassette into operating region of quartz reactor which has initial temperature level, heating silicon plate and solid phosphor source in operating region and running diffusion in closed volume, cooling quartz cassette down to initial temperature level and dumping cassette from quartz reactor. When silicon plates and solid doping source are located in cassette, cassette is mounted on quartz bearer on which quartz insertion is mounted behind cassette and both cassette and quartz insertion are loaded simultaneously by means of driving quartz bearer into operating region of quartz reactor in flow of noble gas under usage of less than 250 liters per hour. During heating, diffusion and cooling, quartz bearer is subjected to reciprocal movement. EFFECT: increased functional capabilities. 2 cl, 1 dwg , 1 tbl