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2 006 082

(13)

C1

(51)

IPC

(21) (22)

Application

4799361/21, 1990-03-06

(22)

Actual filing date

1990-03-06

(45)

Published

1994-01-15

(72)

Inventor

Kabyshev A.V.Lopatin V.V.

(73)

Holder

Nauchno-Issledovatel'Skij Institut Vysokikh Naprjazhenij Pri Tomskom Politekhnicheskom Universitete

METHOD OF FORMING RESISTANCE LAYER ON CERAMIC SUBSTRATE Russian patent published in 1994 - IPC

Abstract RU 2006082 C1

FIELD: electrical engineering. SUBSTANCE: resistive layer is formed by implantation of ions of dose 1015-1017cm-2 at energy of 50-150 keV and current density of 10-3-10-2A/cm2 into ceramic substrate surface. For nitride ceramic substrate use is made of ions of lithium, or boron, or carbon, or nitrogen, or aluminium; for oxide ceramic substrate carbon ions are employed. Then substrate is annealed in nitrogen atmosphere at temperature of 1200-1500 K for nitride ceramic substrate and at 1100-1400 K for oxide ceramic substrate. EFFECT: improved thermal stability of resistive layer obtained, stable in operation and showing low surface resistivity. 2 dwg, 2 tbl

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RU 2 006 082 C1

Authors

Kabyshev A.V.

Lopatin V.V.

Dates

1994-01-15—Published

1990-03-06—Filed

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