METHOD FOR DETERMINING PHOTOELECTRIC PARAMETERS OF NONCOMPENSATED IMPURITY SEMICONDUCTORS Russian patent published in 1995 - IPC

FIELD: semiconductor engineering. SUBSTANCE: specimen is irradiated by reference and signal light beam phase modulated at frequency ω. Interference pattern is formed on specimen surface. Current induced in specimen at frequency w depending on spatial interference frequency K is recorded. Frequency w is selected between 0.1 min (τ-e

¹ one τ-n¹) > ω > 10τ_di, where τ_e, τ_n, is mean lifetime of electrons and holes, respectively, τ_di is dielectric relaxation time of illuminated semiconductor. Mean diffusion lengths of electrons and holes, as well as electron-to-hole photoconductance ratio are found by calculation. EFFECT: provision for determination of mean diffused lengths of photoinduced electrons and holes and of electron-to-hole photoconductance ratio of semiconductors with bipolar photoconductance simultaneously. 2 dwg