SEMICONDUCTOR FREQUENCY-TUNED INFRARED SOURCE Russian patent published in 2011 - IPC H01S5/343 

FIELD: physics.

SUBSTANCE: invention relates to semiconductor frequency-tuned infrared sources based on a disc resonator laser working on whispering gallery modes (WGM). Such infrared sources can be used in spectrometry, medicine, optical communication and information transmission systems, in optical ultrahigh speed computer and switching systems and when designing medical equipment. The semiconductor frequency-tuned infrared source has a semiconductor frequency-tuned disc laser for the wavelength range 1.8-4.5 mcm and two voltage sources. The laser has GaSb substrate, a quantum-dimensional heterostructure grown on the substrate, a resonator and top and bottom ohmic contacts. The heterostructure consists of an active region, boundary layers of GaAISbAs and a GaSb contact layer. The active region contains waveguide layers of GaAIAsSb, at least one quantum well of Ga_1-XIn_XAS_YSb_1-Y with the dominant mode of composition and wavelength ranging from 2 nm to 30 nm selected according to the required wavelength range of 1.8-4.5 mcm. The resonator is in form of a disc or a sector of a disc. The bottom ohmic contact is deposited on the substrate and the top ohmic contact is deposited on the front surface of the resonator and consists of two parts electrically insulated from each other. The voltage sources are such that constant or phase-synchronised pulsed voltage of opposite polarity to that of the bottom contact can be applied across the two parts of the said top ohmic contact.

EFFECT: invention increases the range of frequency-tuning the dominant mode of the source.

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