ACTIVE ZONE OF GENERATOR ON SEMICONDUCTOR STRUCTURE Russian patent published in 2011 - IPC H01S5/343 

FIELD: information technology.

SUBSTANCE: active zone is superlattice made in form of a heterostructure from A_IIIB_V type compounds and provides periodic variation of energy of the bottom of the conduction band of the structure. The superlattice has a lattice constant d, consisting of one potential quantum well and a narrow potential barrier whose width is 3-20 times less than the width of the potential quantum well. The working transition in the active zone when voltage is applied is the transition between the Wannier-Stark ground level in one potential quantum well and the first Wannier-Stark excited level in the well, lying at a distance of two or more superlattice constants d.

EFFECT: possibility of frequency tuning in a wide range owing to change in the applied voltage.

4 dwg